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| MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE CM35MX-24A IC ..................................................................... 35A VCES ......................................................... 1200V CIB (3-phase Converter + 3-phase Inverter + Brake) Flatbase Type / Insulated Package / Copper base plate RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers OUTLINE DRAWING & CIRCUIT DIAGRAM 121.7 118.1 110 0.5 99 94.5 Dimensions in mm 1.15 0.65 4-5.5 MOUNTING HOLES 20.5 17 13 7 (7.4) 1.2 13.09 16.9 28.33 32.14 47.38 51.19 66.43 70.24 81.67 85.48 89.29 93.1 96.91 4.06 0 (3.81) TERMINAL t = 0.8 4.3 4.2 0 54 55 56 57 58 59 60 61 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 3.75 0 30 29 28 27 26 25 24 23 11.66 15.48 23.1 26.9 34.52 38.34 58.4 39 50 0.5 57.5 62 15.48 19.28 30.72 34.52 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (3) (7.75) 15 18.8 30.24 34.04 45.48 49.28 60.72 64.52 75.96 79.76 91.2 95 A 0.8 0 Pin positions with tolerance 12.5 SECTION A 1.5 2.5 2.1 0.5 0.8 3.5 LABEL P(52~53) P1(54~55) NTC TH1(29) GuP(49) GvP(44) GwP(39) Division of Dimension 0.5 TH2(28) Tolerance 0.2 0.3 0.5 0.8 1.2 to to to to to 3 6 30 120 400 EuP(48) R(1~2) S(5~6) T(9~10) B(24~25) GB(35) N(57~58) N1(60~61) GuN(34) EvP(43) U(13~14) GvN(33) EwP(38) V(17~18) GwN(32) W(21~22) over over over 3 6 30 over 120 E(31) * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM Jan. 2009 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage (Tj = 25C, unless otherwise specified) Conditions G-E Short C-E Short DC, TC = 105C Collector current Pulse Maximum collector dissipation TC = 25C Emitter current TC = 25C (Free wheeling diode forward current) Pulse (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Rating 1200 20 35 70 295 35 70 Unit V A W A BRAKE PART Symbol VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short DC, TC = 121C Collector current Pulse Maximum collector dissipation TC = 25C Repetitive peak reverse voltage TC = 25C Forward current Pulse Rating 1200 20 20 40 260 1200 20 40 Unit V A W V A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Conditions Repetitive peak reverse voltage Recommended AC input voltage (Note. 1) 3-phase full wave rectifying, TC = 141C DC output current The sine half wave 1 cycle peak value, f = 60Hz, Surge forward current non-repetitive Value for one cycle of surge current Current square time Rating 1600 440 35 350 510 Unit V Vrms A A2S MODULE Symbol Tj Tstg Viso -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Weight Conditions Rating -40 ~ +150 -40 ~ +125 2500 0 ~ +100 2.5 ~ 3.5 270 Unit C Vrms m N*m g Terminals to base plate, f = 60Hz, AC 1 minute (Note. 8) On the centerline X, Y Mounting M5 screw (Typical) Note. 8: The base plate flatness measurement points are in the following figure. - - - Jan. 2009 2 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE ELECTRICAL and THERMAL RESISTANCE CHARACTERISTICS INVERTER PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) Parameter (Tj = 25C, unless otherwise specified) Conditions VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 3.5mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge IC = 35A, VGE = 15V IC = 35A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 35A, VGE = 15V VCC = 600V, IC = 35A VGE = 15V, RG = 9.1 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) (IE = 35A) IE = 35A, VGE = 0V (Note. 6) Tj = 25C Tj = 125C Chip VEC(Note.3) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R RGint RG IE = 35A, VGE = 0V Thermal resistance per IGBT (Note. 1) (Junction to case) per free wheeling diode Internal gate resistance TC = 25C, per switch External gate resistance Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.9 Limits Typ. -- 7 -- 2.0 2.2 1.9 -- -- -- 180 -- -- -- -- -- 1.5 2.6 2.16 2.5 -- -- 0 -- Max. 1 8 0.5 2.6 -- -- 6.0 0.53 0.12 -- 100 50 300 600 200 -- 3.4 -- -- 0.42 0.69 -- 89 Unit mA V A V nF nC ns C V K/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG IRRM(Note.3) Parameter Conditions Min. -- 6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 15 Limits Typ. -- 7 -- 2.0 2.2 1.9 -- -- -- 150 -- 2.6 2.16 2.5 -- -- 0 -- Max. 1 8 0.5 2.6 -- -- 5.1 0.45 0.1 -- 1 3.4 -- -- 0.48 1.1 -- 150 Unit mA V A V VCE = VCES, VGE = 0V Collector cutoff current Gate-emitter threshold voltage IC = 2mA, VCE = 10V Gate leakage current VGE = VGES, VCE = 0V Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current IC = 20A, VGE = 15V IC = 20A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 20A, VGE = 15V VR = VRRM IF = 20A (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) Tj = 25C Tj = 125C Chip (Note. 6) nF nC mA V VFM(Note.3) Forward voltage drop Rth(j-c)Q Rth(j-c)R RGint RG IF = 20A per IGBT Thermal resistance (Note. 1) per Clamp diode (Junction to case) TC = 25C Internal gate resistance External gate resistance K/W CONVERTER PART Symbol IRRM VF Rth(j-c) Parameter Conditions Min. -- -- -- Limits Typ. -- 1.2 -- Max. 4 1.6 0.45 Unit mA V K/W Repetitive peak reverse current VR = VRRM, Tj = 150C IF = 35A Forward voltage drop Thermal resistance per Diode (Note. 1) (Junction to case) Jan. 2009 3 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE NTC THERMISTOR PART Symbol R R/R B(25/50) P25 Parameter Zero power resistance Deviation of resistance B constant Power dissipation Conditions TC = 25C TC = 100C, R100 = 493 Approximate by equation TC = 25C Min. 4.85 -7.3 -- -- Limits Typ. 5.00 -- 3375 -- Max. 5.15 +7.8 -- 10 Unit k % K mW (Note. 7) MODULE Symbol Rth(c-f) Parameter Conditions (Note. 2) Min. -- Limits Typ. 0.015 Max. -- Unit K/W Contact thermal resistance Thermal grease applied (Note. 1) per 1 module (Case to fin) Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of = 0.9W/(m*K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. 5: Junction temperature (Tj) should not increase beyond 150C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for VCE(sat) and VEC) 1 7: B(25/50) = In( R25 )/( 1 ) T50 R50 T25 R25: resistance at absolute temperature T25 [K]; T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [C]+273.15 = 323.15 [K] Chip Location (Top view) (121.7) (110) Dimensions in mm (tolerance: 1mm) 0 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 84.4 89.0 94.9 98.2 100.4 32.4 40.4 48.4 65.0 70.6 74.7 0 0 54 55 (62) (50) 28.4 29.4 41.9 56 57 58 59 60 61 CR C R C R RN S N T N CR C R C R RP S P T P 1 2 3 4 5 6 7 8 Tr Br Tr Tr Di Tr UP VP B r WP Th Di Tr Di Tr Di Tr UP UN VP VN WP WN Di Di Di WN UN VN 30 29 28 27 26 25 24 23 19.1 27.5 (Tr/UP, Tr/VP, Tr/WP) 28.6 (Di/Br, Th) 35.7 42.6 9 10 11 12 13 14 15 16 17 18 19 20 21 22 29.4 37.4 45.4 63.7 70.1 77.5 81.5 83.4 91.3 96.7 0 LABEL SIDE Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor Jan. 2009 4 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE P1 V VGE = 15V GuP EuP P1 IC VGE = 0V GuP EuP P1 U VGE = 0V GuN E U VGE = 15V GuN E B IC V VGE = 15V GB E IC N1 V N1 N1 P side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) VCE(sat) test circuit Br Tr VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) P1 V VGE = 0V GuP EuP P1 IE VGE = 0V GuP EuP P1 V IF B U U VGE = 0V GuN E VGE = 0V GuN E IE N1 V VGE = 0V GB E N1 P side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) N side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP, GwP-EwP, GvN-E, GwN-E, GB-E) VEC/VFM test circuit N1 Br Di VG*E* = 0V (GuP-EuP, GvP-EvP, GwP-EwP, GuN-E, GvN-E, GwN-E) Arm IE 0V Load VGE 90% 0% IE trr -VGE + VCC IC 90% +VGE 0V -VGE 0A t RG VGE VCE IC 0A td(on) tr td(off) tf Irr 10% 1/2 Irr Qrr = 1/2 Irr trr Switching time test circuit and waveforms trr, Qrr test waveform Jan. 2009 5 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) 60 50 VGE = 20V 15 Tj = 25C 13 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 70 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VGE = 15V 12 40 30 11 20 10 0 0 1 2 3 4 5 6 7 8 10 9 9 10 Tj = 25C Tj = 125C 10 20 30 40 50 60 70 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 10 Tj = 25C 8 6 EMITTER CURRENT IE (A) 101 7 5 3 2 4 IC = 70A 2 IC = 35A IC = 14A 0 6 8 10 12 14 16 18 20 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 100 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 CAPACITANCE (nF) 101 Cies Coes SWITCHING TIME (ns) tf td(off) 102 7 5 3 2 100 td(on) tr Conditions: VCC = 600V VGE = 15V RG = 9.1 Tj = 125C Inductive load 2 3 5 7 101 2 3 5 7 102 101 7 5 3 2 10-1 Cres VGE = 0V 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 0 10 COLLECTOR CURRENT IC (A) Jan. 2009 6 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 101 7 SWITCHING LOSS (mJ/pulse) SWITCHING TIME (ns) tf td(off) 5 3 2 102 7 5 3 2 Eoff Eon Err td(on) tr 100 7 5 3 2 Conditions: 101 VCC = 600V 7 5 VGE = 15V 3 IC = 35A 2 Tj = 125C Inductive load 100 0 10 23 5 7 101 2 3 5 7 102 10-1 0 10 Conditions: VCC = 600V VGE = 15V RG = 9.1 Tj = 125C Inductive load 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part 102 Conditions: VCC = 600V VGE = 15V IC, IE = 35A 101 Tj = 125C 7 Inductive load 7 5 3 2 5 3 2 SWITCHING LOSS (mJ/pulse) Eon lrr (A), trr (ns) 102 7 5 3 2 trr Eoff 100 7 5 3 2 Err 101 7 5 3 2 10-1 0 10 2 3 5 7 101 2 3 5 7 102 100 0 10 Irr Conditions: VCC = 600V VGE = 15V RG = 9.1 Tj = 25C Inductive load 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 100 7 Single pulse, 5 TC = 25C 3 2 7 5 3 2 GATE-EMITTER VOLTAGE VGE (V) IC = 35A VCC = 400V 15 VCC = 600V NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c) 10-1 10 10-2 7 5 3 2 5 0 0 50 100 150 200 250 10-3 10-52 3 5710-42 3 5710-32 3 5710-22 3 5710-12 3 57100 2 3 57101 TIME (s) Inverter IGBT part : Per unit base = Rth(j-c) = 0.42K/W Inverter FWDi part : Per unit base = Rth(j-c) = 0.69K/W Converter-Di part : Per unit base = Rth(j-c) = 0.45K/W Brake IGBT part : Per unit base = Rth(j-c) = 0.48K/W Brake Clamp-Di part : Per unit base = Rth(j-c) = 1.1K/W GATE CHARGE QG (nC) Jan. 2009 7 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 102 4 VGE = 15V 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 Tj = 25C Tj = 125C 30 35 40 FORWARD CURRENT lF (A) 7 5 3 2 101 7 5 3 2 Tj = 25C Tj = 125C 0 0.5 1.0 1.5 2.0 100 FORWARD VOLTAGE VF (V) COLLECTOR CURRENT IC (A) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part 102 7 5 3 2 FORWARD CURRENT IF (A) 101 7 5 3 2 Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 FORWARD VOLTAGE VF (V) 100 Jan. 2009 8 |
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